准弹道输运纳米MOSFET散粒噪声的抑制研究  

Research on shot noise suppression in quasi-ballistic transport nano-MOSFET

作　　者：贾晓菲[1,2] 杜磊[1] 唐冬和[1] 王婷岚[1] 陈文豪[1] 

机构地区：[1]西安电子科技大学技术物理学院,西安710071 [2]安康学院电子与信息工程系,安康72500

出　　处：《物理学报》2012年第12期467-474,共8页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:61076101)资助的课题~~

摘　　要：目前研究准弹道输运纳米MOSFET散粒噪声的抑制时,采取了完全不考虑其抑制,或只强调抑制的存在而并未给出抑制公式的方式进行研究.本文基于Navid模型推导了准弹道输运纳米MOSEET散粒噪声,并得到了其在费米作用、库仑作用和二者共同作用三种情形下的抑制因子.在此基础上,对各抑制因子随源漏电压、栅极电压、温度及源漏掺杂浓度的变化特性进行了研究.两者共同作用的抑制因子随源漏电压和栅极电压变化特性与文献中给出的实验结论相符合,从而对实验上得到两者共同作用下的抑制因子随源漏电压和栅极电压的变化特性给出了理论解释.Previous studies of shot noise suppression in nano-MOSFET either ignored its suppression or emphasized only its existence but gave no deeper research. In this paper, based on the Navid model, the expressions of shot noise suppression factor （Fano） in quasiballistic transport nano-MOSFETs are derived with separately considering Fermi effect, Coulomb interaction and the combination of the two effects. The variations of suppression-factors with source-drain voltage, gate voltage, temperature and source-drain doping are investigated. The results we obtained with considering the combination of the two effects are consistent with those from experiments, and the theoretical explanation is given.

关 键 词：散粒噪声 抑制因子 纳米MOSFET 

分 类 号：TN386.1[电子电信—物理电子学]