二氧化锡覆盖层对ITO透明导电薄膜热稳定性的改良  

Thermal stability improvements of ITO transparent conducting films with a SnO_2 overlayer

作　　者：于仕辉[1] 丁玲红[1] 张伟风[1] 

机构地区：[1]河南大学物理与电子学院河南省光伏材料重点实验室,河南开封475004

出　　处：《电子元件与材料》2012年第7期51-54,共4页Electronic Components And Materials

基　　金：河南省高校科技创新人才支持计划资助项目(No.2002006);河南省教育厅自然科学基金资助项目(No.2009B48003)

摘　　要：采用射频磁控溅射法在ITO玻璃表面沉积了一层15 nm左右的SnO2薄膜。利用霍尔效应测试仪、四探针电阻测试仪、场发射电子显微镜及紫外–可见–近红外光谱仪分析了所制薄膜的电学性质、表面形貌和光学性质。结果表明，在300~600 ℃退火后镀有SnO2覆盖层的ITO（SnO2/ITO）薄膜具有相对好的热学稳定性。在600 ℃退火后，ITO薄膜的方阻和电阻率分别为88.3 Ω/□和2.5×10–3 Ω·cm，而此时，SnO2/ITO薄膜的方阻和电阻率仅为43.8 Ω/□和1.2×10–3 Ω·cm。最后，阐述了SnO2覆盖层提高ITO薄膜热稳定性的机制。SnO2 thin films were prepared on ITO glass substrates by radio frequency magnetron sputtering method. The electrical properties, surface topography and optical properties of the prepared films were investigated by hall effect measurements system, four point probe instrument, field emission scanning electron microscopy （FE-SEM） and ultraviolet-visible-near infrared （UV-Vis-NIR） spectrophotometer. The results show that the ITO films covered with the SnO2 films （SnO2/ITO） show remarkable improvement in thermal stability for subsequent heat treatments in the temperature range from 300 to 600 ℃. After annealing at 600 ℃, the sheetresistance and resistivity of ITO film are 88.3 Ω/□ and 2.5×10–3 Ω·cm, respectively, while the sheetresistance and resistivity of SnO2/ITO film are 43.8 Ω/□ and 1.2×10–3 Ω·cm. In the end, the mechanism of enhanced thermal stability by SnO2 overlayer is expounded.

关 键 词：氧化铟锡(ITO) 磁控溅射 SNO2 热稳定性 

分 类 号：TN305.05[电子电信—物理电子学]