基于有限体积法的MOCVD系统反应室的设计  

Simulation-Assisted Design of Metal Organic Chemical Vapor Deposition Reactor

作　　者：秦琦[1] 周凯[1] 莫晓亮[2] 田振夫[1] 陈国荣[2] 

机构地区：[1]复旦大学力学与工程科学系,上海200433 [2]复旦大学材料科学系,上海200433

出　　处：《真空科学与技术学报》2012年第6期457-462,共6页Chinese Journal of Vacuum Science and Technology

基　　金：上海市科学技术发展基金资助项目(09DZ1142102);上海市教育委员会科研创新项目(11ZZ02);教育部留学回国人员科研启动基金资助项目;国家自然科学基金资助项目(10972058)

摘　　要：金属有机化合物化学气相沉积(MOCVD)系统是制备GaN等半导体薄膜材料和激光器、LED等光电子器件的主要手段,制备出的材料和器件的品质直接依赖于MOCVD系统。本文基于有限体积法,利用商业软件Fluent对自行设计的一种MOCVD反应室内的温度分布和流场进行数值模拟。希望通过对模拟流场品质的细致分析,对MOCVD反应室的设计和优化起到指导与参考作用。A novel type of metal organic chemical vapor deposition （MOCVD） reactor has been successfully developed and constructed to grow the advanced, device-grade semiconductor nraterials, such as GaN films, laser and light emission device （FED） materials, on industrial scale. The impacts of various technical factors, including the geometry of the MOCVD reactor, the temperature distributions and the gas flow field, especially in the areas of interest inside the reactor, on the film growth were simulated in finite volume method （FVM） with software package Fluent. The simulated results provide valuable information for the design optimization of the MOCVD. Further research work and possible improvement of the MOCVD design were also tentatively discussed in a thought-provoking way.

关 键 词：GAN 金属有机化合物化学气相沉积系统 数值模拟 有限体积法 

分 类 号：TB43[一般工业技术]