基于SOI衬底的谐振腔结构对锗直接带发光增强的研究  

A Study on the Enhancement of Ge Direct Bandgap Photoluminescence Based on SOI Resonant Cavity

作　　者：陈城钊[1] 

机构地区：[1]韩山师范学院物理与电子工程系,广东潮州521041

出　　处：《韩山师范学院学报》2012年第3期29-33,共5页Journal of Hanshan Normal University

摘　　要：基于散射矩阵法对SOI衬底的谐振腔结构进行了理论设计.采用超高真空化学气相沉积系统,在SOI基的Ge虚衬底上制备出高质量的Ge和Ge/SiGe多量子阱材料.室温下样品的光致发光谱表明SOI衬底的谐振腔结构对锗直接带发光起有效的强度增强作用,实验结果与理论预期符合得很好.SOI-based resonant cavity was theoretically designed basing on the transition matrix method. High-quality Ge and Ge/SiGe multiple quantum wells were grown on SOI-based germanium virtual substrates by ultrahigh vacuum chemical vapor deposition. The room temperature photoluminescence of the samples indi- cates that the SOI-based resonant cavity can effectively enhance the photoluminescence originated from the Ge direct bandgap, which is in good agreement with the theoretical prediction.

关 键 词：散射矩阵法 SOI 锗 光致发光谱 

分 类 号：TN304.1[电子电信—物理电子学]