高阻p型硅大面积四象限探测器的研制  

Study on p-type Large Area Silicon Four-quadrant Photo-detector with High Resistance R_0

作　　者：向勇军[1] 黄烈云[1] 李作金[1] 

机构地区：[1]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2012年第3期364-366,共3页Semiconductor Optoelectronics

摘　　要：采用PIN结构,研制出高阻p型硅大面积四象限探测器。详细介绍了器件结构设计和制作工艺。对器件响应时间、象限串扰、暗电流和响应度等参数进行了计算与分析。实验结果表明,器件响应度达到0.45A/W(λ=1.06μm),暗电流小于50nA(Vr=135V),象限间串扰低于2.5%。A p-type large area silicon four-quadrant photosensitive detector with high resistance （R0） is fabricated using PIN structure, and the structure design and process are described in detail. The parameters of response time, quadrant cross talk, dark current and responsivity are calculated and analyzed. The test results show that the responsivity reaches 0.45 A/W （2,=1.06 μm）, while the dark current and the cross talk between quadrants are less than 50 nA （VR = 135 V） and 2.5%, respectively

关 键 词：高阻p型硅 四象限探测器 串扰 

分 类 号：TN364.2[电子电信—物理电子学]