Cs/p-GaAs(100)表面的变角XPS研究  

Study of Cs/p-GaAs(100) Surface by Angle dependent XPS

作　　者：汪贵华[1] 杨伟毅[1] 常本康[1] 

机构地区：[1]南京理工大学电子工程与光电技术学院,南京210094

出　　处：《真空科学与技术》2000年第3期176-178,206,共4页Vacuum Science and Technology

摘　　要：在实验数据的基础上 ,采用变角XPS分析表面层状结构的计算程序 ,应用了新算法 ,使该程序能快速可靠地计算多层多种组分的含量和层厚度。计算了Cs吸附在清洁p GaAs(1 0 0 )表面上的Cs层覆盖率及弛豫层的厚度和组分。在Cs/GaAs达到峰值光电发射时 ,Cs覆盖率为 0 71个单层 ,Ga与As弛豫层厚度为 2 3个单层 ,Ga相对As轻微富集。A computer simulation program was developed to extract information concerning structures and chemical composition of top surface layers from data obtained in angle dependent X ray photoelectron spectroscopy measurement.In the case of Cs absorbed p type GaAs(100) system,the Cs coverage,stoichiometries of the top surface layers and the relaxation layers thickness were obtained by angle dependent XPS in combination of the simulation program.We found that the photo emission of Cs/GaAs peaks at 0 71 monolayer of Cs coverage,and 2 3 atomic layer of Ga and As in the relaxation layer,where Ga is slight richer than As.

关 键 词：砷化镓 铯吸附 变角XPS 覆盖率 表面层结构 

分 类 号：TN304.23[电子电信—物理电子学] O471[理学—半导体物理]