透明导电薄膜ZnO:Zr的反应磁控溅射法制备及表征  

Preparation and characterization of transparent conducting ZnO:Zr films deposited by reactive magnetron sputtering

作　　者：张化福[1] 牛瑞华[2] 

机构地区：[1]山东理工大学理学院,山东淄博255049 [2]西南技术物理研究所,四川成都610041

出　　处：《光电子．激光》2012年第7期1333-1337,共5页Journal of Optoelectronics·Laser

基　　金：山东省自然科学基金(ZR2009GQ011)资助项目

摘　　要：以Zn金属靶和Zr金属片组成的Zn:Zr为靶材,利用直流反应磁控溅射法在玻璃衬底上制备ZnO:Zr透明导电薄膜。研究了靶与衬底之间的距离对所制备薄膜结构和性能的影响。实验制备的ZnO:Zr薄膜为六方纤锌矿结构的多晶薄膜,且具有与衬底方向垂直的c轴择优取向。实验结果表明,靶与衬底之间的距离对ZnO:Zr薄膜的结构、生长速率、密度及电学性能有很大影响。靶与衬底之间的最佳距离为6.0cm,在此条件下制备的ZnO:Zr薄膜具有最小电阻率1.78×10-3Ω.cm,其可见光透过率为88.5%,折射率为2.04。Transparent conducting ZnO：Zr films were deposited on glass substrates by DC reactive magnetron sputtering from a Zn： Zr target consisting of a Zn metallic target and Zr metallic chips. The effects of target-to-substrate distance on their microstructures and properties are investigated. The deposited polycrystalline ZnO： Zr films are hexagonal structures with c-axis as the preferred orientation perpendicular to the substrate. The results show that the target-to-substrate distance greatly affects the microstructure,growth rate,density and electrical properties. At an optimal target-to-substrate distance of 6.0 cm, the ZnO：Zr film has a resistivity of 1.78 × 10-3 Ω · cm, an average transmittance of approximately 88. 5 %,and a refractive index about 2.04.

关 键 词：ZnO:Zr 直流反应磁控溅射 透明导电薄膜 靶与衬底之间的距离 

分 类 号：TN304.2[电子电信—物理电子学] TN304.055