Mn掺杂ZnO基稀磁半导体材料磁性研究进展  

Recent progress in developing magnetic properties of Mn-doped ZnO diluted magnetic semiconductors

作　　者：张宇[1] 李彤[1] 王雅欣[1] 赵新为[1] 介琼[1] 

机构地区：[1]天津职业技术师范大学电子工程学院,天津300222

出　　处：《天津职业技术师范大学学报》2012年第2期34-37,共4页Journal of Tianjin University of Technology and Education

基　　金：天津市教委资助项目(20110711)

摘　　要：ZnO基稀磁半导体是目前研究的热门课题,其中关于Mn掺杂ZnO的磁性研究有很多报道。文章对不同方法及条件制备的Mn掺杂以及Mn与其它元素共掺杂ZnO基稀磁半导体的磁性和相应机理进行了整理和归纳,总结发现,铁磁性可能源于样品的内禀性、晶格中Zn替代、缺陷、载流子调制等。ZnO-based diluted magnetic semiconductors （DMSs） have become a focus problem. Recently, there have been many reports about the magnetism of Mn doped ZnO. In this paper, the magnetic properties and possible mechanism of Mn-doped and Mn codoped with the other elements in ZnO-based DMS prepared by different methods and conditions are summarized and reviewed. It is found that the studies support that ferromagnetism may be due to its intrinsic, substitution of Zn ion, defects, carrier modification and etc.

关 键 词：稀磁半导体 ZNO MN 磁性机理 

分 类 号：O472[理学—半导体物理]