Cu(In,Ga)Se_2太阳能电池快速热退火效应  

Rapid thermal annealing effect on Cu(In,Ga)Se_2 solar cells

作　　者：杨洁[1] 陈东生[1,2] 郑玲玲[1] 杜汇伟[1] 周平华[1] 石建伟[1] 徐飞[1] 马忠权[1] 

机构地区：[1]上海大学索朗光伏材料与器件研发联合实验室,上海200444 [2]上海电力学院数理学院物理实验中心,上海200090

出　　处：《强激光与粒子束》2012年第7期1629-1632,共4页High Power Laser and Particle Beams

基　　金：国家自然科学基金项目(60876045);上海市基础研究重点项目(09JC1405900);上海市重点学科建设项目(S30105);SHU-SOEN’s PV联合实验室基金项目(SS-E0700601)

摘　　要：利用光致发光(PL)分析快速热退火对Cu(In,Ga)Se2(CIGS)电池的影响,研究退火对薄膜缺陷的影响。Cu(In,Ga)Se2电池的PL谱中总共有7个峰,即2个可见波段峰和5个红外波段峰。退火温度较低,可减少薄膜体内缺陷,提高载流子浓度,改善薄膜质量;退火温度过高,则会引起正常格点处元素扩散,元素化学计量比改变,体内缺陷增加,吸收层带隙降低,反而会对CIGS薄膜造成破坏。The paper studies the rapid thermal annealing（RTA） effect on Cu（In, Ga）Se2 （CIGS） solar cells at different an- nealing temperatures by photoluminescence（PL）. Continuous RTA was applied to CIGS solar cells to study annealing effect on film defects. Seven peaks exist in CIGS PL spectra： two in visible light region, the others in infrared region. When the temperature is relatively low, RTA treatment can improve the film quality because of the decrease of defects and the increase of carriers. High temperature RTA treatment will lead to elements diffusion between layers and change of stoichiometrie ratio, increasing interface states and decreasing the bandgap of absorber layer, and thus destroy the device structures.

关 键 词：太阳能电池 快速热退火 光致发光 薄膜缺陷 

分 类 号：O474[理学—半导体物理]