基于Matlab的忆感器建模仿真及应用  

Meminductor Modeling Based on Matlab and Applications

作　　者：张金铖[1] 李传东[1] 李超辈[1] 

机构地区：[1]重庆大学计算机学院,重庆400044

出　　处：《固体电子学研究与进展》2012年第3期239-245,共7页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(60974020)

摘　　要：忆感器是一种有记忆能力的非线性电感器,其电感值的变化依赖于流过它的电荷数或磁通量。对于这种新的纳米级的电子元件,从电路学的基本原理出发,推导了它的基本公式,从数值分析的角度提出了一种新的基于Matlab的忆感器的建模及仿真方法,验证了忆感器的典型的磁滞回环现象,并利用这种方法重点分析了忆感器在非易失性存储和人工神经网络中的应用。实验表明,该建模方法准确地反映了忆感器的特性,同时也说明了忆感器在众多的领域里具有很高的潜在的应用价值。Meminductor is a nonlinear inductor with memory capacity whose inductance de-pends on the past states through which the systems has evolved. To further study this new nanometer electric element, the basic principle of the meminductor is deduced from the basic cir-cuit theory. A new meminductor model based on Matlab is built for numerical analysis. The typi-cal pinched hysteresis loops are demonstrated and discussed. The practical applications of memin-ductor are analyzed in non-volatile memory and artificial neural network. It is shown that the modeling accurately reflects the meminductor performance and the meminductor has lots of poten-tial applications in many fields with its unique characteristics at the same time.

关 键 词：忆感器 MATLAB SIMULINK 非易失性存储 人工神经网络 

分 类 号：TN602[电子电信—电路与系统]