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作 者:吴忠洁 Lu Jingxue Huang Fengyi Jiang Nan
机构地区:[1]Institute of Information Science and Engineering,Southeast University,Nanjing 210096,P.R.China [2]S-TEK Research Center,Aoya Microeleclxonics,Zhangjiang High-Tech Park,Shanghai 201203,P.R.China
出 处:《High Technology Letters》2012年第2期124-127,共4页高技术通讯(英文版)
摘 要:A model of monolithic transformers is presented, which is analyzed with characteristic functions. A closed- form analytical approach to extract all the model parameters for the equivalent circuit of Si-based on-chip transformers is proposed. A novel de-coupling technique is first developed to reduce the complexity in the Y parameters for the transformer, and the model parameters can then be extracted analytically by a set of characteristic functions. Simulation based on the extracted parameters has been carried out for transformers with different structures, and good accuracy is obtained compared to a 3-demensional full-wave numerical electro- magnetic field solver. The presented approach will be very useful to provide a scalable and wide-band compact circuit model for Si-based RF transformers.
关 键 词:TRANSFORMER parameter extraction compact model radio frequency integrate circuit((RFIC)
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