砷注入碲镉汞的激光退火  

The Study of Arsenic Implanted HgCdTe for Laser Annealing

作　　者：张燕 李向阳 姜润清 孙喻明 方家熊 

机构地区：[1]山东大学红外遥感研究室,山东济南250100 [2]传感器国家重点实验室

出　　处：《红外技术》2000年第4期26-29,共4页Infrared Technology

摘　　要：利用脉冲YAG激光器 (脉宽为 1 0ns ,波长为 1 .0 6μm)对砷注入长波碲镉汞样品进行激光退火实验 ,分析注入退火引起的样品电学性质的变化 ,认为激光退火能够消除辐射损伤 ,并激活注入杂质。同时对电导率 迁移率谱这一实验方法也做了较详细的说明。Arsenic implanted HgCdTe samples with long cutoff wavelength were annealed using the pulsed YAG laser irradiation method(pulse duration was 10 ns, wave length was 1.06 μm). The changes of electricity properties of the samples after implanted and annealed has been analysed. We thought that laser annealing could eliminate radiation damage and activate implant. At the same time, we discussed the conductivity mobility spectrum analysis method.

关 键 词：激光退火 砷注入 碲镉汞 

分 类 号：TN304.26[电子电信—物理电子学] TN213