NZO透明导电薄膜的制备及其性能研究  

Preparation and properties of NZO transparent conducting thin films

作　　者：周爱萍[1] 刘汉法[1] 高金霞[1] 张化福[1] 

机构地区：[1]山东理工大学理学院,山东淄博255049

出　　处：《光电子．激光》2012年第8期1525-1528,共4页Journal of Optoelectronics·Laser

基　　金：山东省自然科学基金(ZR2009GQ011)资助项目

摘　　要：室温下,采用直流磁控溅射法,在玻璃衬底上制备出Nb掺杂ZnO(NZO,ZnO:Nb)透明导电薄膜。研究了靶与衬底之间的距离对NZO薄膜结构、形貌、光学及电学性能的影响。实验结果表明,不同靶基距下制备的NZO薄膜均为c轴择优取向生长,(002)衍射峰的强度随着靶基距的减小而增大。靶基距增大时,薄膜表面逐步趋向平整光滑、均匀致密,薄膜的厚度逐渐减小。在靶基距为60mm时,制备的薄膜厚为355.4nm,电阻率具有最小值(6.04×10-4Ω.cm),在可见光区的平均透过率达到92.5%,其光学带隙为3.39eV。Transparent conducting Nb-doped ZnO （NZO） thin films were prepared by DC magnetron sputtering on glass substrate at room temperature. The effects of target-to-substrate distance on structural,morphological,optical and electrical properties of ZnO：Nb films are investigated. Experimental results show that Nb-doped ZnO thin films exhibit preferred maxis-orientation with different target-to substrate distances. When the target-to-substrate distance decreases, the intensity of （002） diffraction 15eak is enhanced. The surface of the films tends to be smooth,uniform and compact while the film thickness gradually decreases as the target-to-substrate distance increases. The lowest resistivity achieved is 6. 04 × 10-4 Ω·cm when the target-to-substrate distance is 60 mm and the prepared film thickness is 355.4 nm. The film presents a high transmittance of 92.5% in the visible range and the optical band gap is 3.39 eV.

关 键 词：ZnO:Nb(NZO)薄膜 靶基距 透明导电薄膜 磁控溅射 

分 类 号：O484.4[理学—固体物理]