掺铒硅多孔化后的光致发光特性  

PHOTOLUMINESCENCE OF ERBIUM DOPED POROUS SILICON PREPARED BY ANODIC ETCHING OF MOLECULAR BEAM EPITAXIAL GROWTH 

作　　者：顾岚岚[1] 熊祖洪[1] 陈刚 徐少辉[1] 

机构地区：[1]复旦大学应用表面物理国家重点实验室,上海200433

出　　处：《物理学报》2000年第2期383-387,共5页Acta Physica Sinica

基　　金：国家自然科学基金!重点项目 (批准号 :5 983 2 10 0 )资助的课题

摘　　要：采用一种新的方法制备掺Er多孔硅.首先通过分子束外延法生长Er,O共掺的硅外延层,然后通过常规的电化学阳极腐蚀法将外延层制备成掺Er离子的纳米硅柱结构.由于实现了Er离子在多孔硅中沿深度方向的均匀分布,得到峰宽仅6nm的Er3+本征发光.同时,由于铒与氧共掺于硅柱内部,多孔硅不再需要通过高温后处理引入氧来实现铒的光学激活.实验还对多孔化前后,Er3+的发光强度作出直观的比较,讨论多孔硅可见光及红外光区域的发光对Er3+红外发射的影响.A new method for fabricating Er doped porous silicon is presented.The sample is prepared by anodization of the Er doped silicon grown by molecular beam epitaxy.A pretty narrow 1.533?μm emission with a full width at half maximum(FWHM) of 3meV is achieved,which reflects the uniformity of doping Er in the Si nanostructure.Meanwhile,there is no need to employ high temperature procedure to incorporate oxygen into the PSi∶Er matrix since the codoping of O and Er has already been achieved before the anodization.We demonstrate the direct comparison of the photoluminescence between the anodized PSi∶Er and the Si∶Er grown by MBE.The influence of the visible light and the infrared luminescence bands on the emission of the Er 3+ is also discussed.

关 键 词：掺铒硅 多孔硅 光致发光特性 

分 类 号：O472[理学—半导体物理]