基于HSIM的铁电电容性能的研究  

Research of the Ferroelectric Capacitor Performance Based on HSIM

作　　者：毕长红[1] 罗玉香[1] 胡滨[1] 翟亚红[1] 辜科[1] 

机构地区：[1]电子科技大学微电子与固体电子学院,四川成都610054

出　　处：《压电与声光》2012年第4期614-616,621,共4页Piezoelectrics & Acoustooptics

基　　金：电子薄膜与集成器件国家重点实验室创新基金资助项目

摘　　要：基于对铁电电容实际测试性能及物理模型的分析,在仿真软件HSIM原始电容模型库的基础上,通过对实验室制备的铁电电容电滞回线的拟合,得出新的模型库参数。将这些参数导入HSIM中对铁电存储器(FRAM)进行仿真,根据仿真结果对比铁电电容的性能,并由此优化铁电电容的性能,使之更匹配于电路特性。The new model parameters are acquired by means of fitting the ferroelectric capacitors＇ hysteresis loops fabricated in laboratory based on HSIM actual test performance and initial capacitive model. The FRAM is simulated by introducing these parameters into HSIM. The performance of the ferroelectric capacitor is compared according to the simulation results. Hence the performance of the ferroeleetric capacitor ean be optimized to match the eireuit characteristics.

关 键 词：铁电电容 铁电存储器 剩余极化 

分 类 号：TN384[电子电信—物理电子学]