温度对p-InN薄膜光电导灵敏度的影响  

Temperature-dependent Photoresponsivity Observed in Mg-doped p-InN Layers

作　　者：冯丽[1] 

机构地区：[1]北京大学物理学院,北京100871

出　　处：《发光学报》2012年第7期785-789,共5页Chinese Journal of Luminescence

摘　　要：研究了p型InN的光电导效应。利用分子束外延技术(MBE)法生长出高质量的InN薄膜,在此基础上利用Mg掺杂获得了p-InN。原位反射高能电子衍射(RHEED)表明样品在生长过程中保持二维生长模式,原子力显微镜(AFM)测试结果显示台阶流的生长模式。实验发现,p型InN的光电导灵敏度随温度的升高而降低。其主要原因是当温度升高时,光生载流子浓度降低和样品背景浓度升高共同造成的。We reported the photoconductivity of Mg-doped p-InN layers,which were grown by molecular beam epitaxy（MBE）.The surface of these samples was very flat which were observed by both reflection high energy electron diffraction（RHEED） and atomic force microscope（AFM）.We studied the temperature-dependent photoconductivity of Mg-doped p-InN layers.We found out that the photosensitivity decreased with increasing temperature,which resulted from both the variation of photon-generated carrier concentration and the residual carrier concentration with increasing temperature.

关 键 词：分子束外延 原位反射高能电子衍射 Mg掺杂p-InN 光电导灵敏度 

分 类 号：O472.3[理学—半导体物理]