制备工艺对ITO薄膜的电阻率及沉积速率的影响  

Effects of fabricating technology on the resistivity and the depositing rate of ITO thin films

作　　者：赵文雅[1] 蒋洪川[1] 陈寅之[1] 张万里[1] 彭少龙[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《电子元件与材料》2012年第8期19-21,共3页Electronic Components And Materials

基　　金：国防预研项目资助(No.51312050405)

摘　　要：采用射频磁控溅射法制备了氧化铟锡[ITO,In2O3:SnO2=90:10(质量比)]薄膜,详细探讨了溅射气氛氧氩体积比、溅射功率及溅射气压对ITO薄膜电阻率和沉积速率的影响。结果表明:溅射工艺参数对ITO薄膜电阻率和沉积速率的影响十分明显。随着氧氩体积比的增大,样品的电阻率显著增大,沉积速率下降;随着溅射功率的增加,ITO薄膜的电阻率先减小后略微增大,沉积速率上升;随着溅射气压升高,ITO薄膜的电阻率先减小后增大,当溅射气压增大到较大值时,ITO薄膜的电阻率又开始减小,而沉积速率则先上升后下降。Indium tin oxide [ITO, In2O3 ： SnO2 = 90 ： 10 （mass ratio）] thin films were prepared by RF magnetron sputtering method. The effects of the ratio by volume of oxygen vs argon in the sputtering media, the sputtering power and the sputtering pressure on the resistivity and the depositing rate of ITO thin films were explored in detail. The results show that the resistivity and the depositing rate of ITO thin films are obviously influenced by the sputtering parameters. With the increase of the ratio by volume of oxygen vs argon, the resistivity of the sample increases obviously and the depositing rate decreases; With the increase of the sputtering power, the resistivity firstly decreases, then lightly increases and the depositing rate increases; With the increase of the sputtering pressure, the resistivity firstly decreases, then increases. However, the resistivity decreases when the sputtering pressure increase to a larger value. But the depositing rate firstly increases, then decreases.

关 键 词：射频磁控溅射 ITO薄膜 电阻率 沉积速率 

分 类 号：TB34[一般工业技术—材料科学与工程]