与ONO反熔丝FPGA匹配的高压器件设计  

High-voltage device applications in ONO antifuse FPGA

作　　者：周云波[1] 于宗光[1,2] 封晴[2] 胡凯[2] 

机构地区：[1]江南大学物联网工程学院,无锡214122 [2]中国电子科技集团公司第五十八研究所,无锡214035

出　　处：《东南大学学报（自然科学版）》2012年第4期614-617,共4页Journal of Southeast University：Natural Science Edition

基　　金：江苏省"333工程"科研资助项目(BRA2011115)

摘　　要：描述了一种与ONO反熔丝现场可编程门阵列(FPGA)匹配的高压nMOSFET的设计.该器件采用中国电子科技集团公司第五十八研究所晶圆的1.0μm 2P2M ONO反熔丝工艺生产实现.该工艺中,通过一次离子注入和高温推进实现了深结HVNwell;通过将高压注入与栅极多晶保持0.2μm的间距解决了增加结深、提高速度与降低穿通击穿电压的矛盾;通过一次离子注入实现了高压nMOSFET阈值电压的调整.测试结果表明:高压nMOSFET的击穿电压达到21～23 V,远大于ONO反熔丝13.5 V的编程电压;饱和电流为4.32 mA,与工艺改进前相比饱和电流明显增大,工作速度得到提升,满足反熔丝FPGA工作频率的要求;阈值电压为0.78 V,与常压器件兼容.A design of the high-voltage devices which matches antifuse-based FPGA（field programmable gate array） characteristics is presented.The 1.0 μm 2P2M ONO antifuse process of CETC NO.58 Research Institute was used to design and produce a high-voltage nMOSFET.Particularly by way of once ion implantation and high temperature promotion,a deep junction HVNwell was created.By keeping 0.2 μm space between gate and high-voltage injection,the conflict between the increase in the depth of junction and the speed and the reducing of low punch through breakdown voltage is resolved.To adjust the threshold voltage of the high-voltage nMOSFET by once ion implantation.Test results show that the breakdown voltage of high voltage nMOSFET can reach 21 to 23 V,which is far greater than the programming voltage of 13.5 V.The saturation current is 4.32 mA,which is significantly higher than that before the process improvement.The threshold voltage 0.78 V is matched with that of general device.

关 键 词：高压器件 ONO型反熔丝 FPGA 

分 类 号：TN386[电子电信—物理电子学]