用气态源分子束外延生长法制备Si/SiGe/Sinpn异质结双极晶体管  

Growth of Si/SiGe/Si Heterojunction Bipolar Transistors by Gas-Source Molecular Beam Epitaxy

作　　者：刘学锋[1] 李晋闽[1] 孔梅影[1] 黄大定[1] 李建平[1] 林兰英[1] 

机构地区：[1]中国科学院半导体研究所北方微电子基地,北京100083

出　　处：《Journal of Semiconductors》2000年第2期142-145,共4页半导体学报（英文版）

基　　金：国家九五攻关项目

摘　　要：用气态源分子束外延法制备了Ｓｉ／ＳｉＧｅ／Ｓｉｎｐｎ 异质结双极晶体管．晶体管基区Ｇｅ 组分为０．１２，Ｂ掺杂浓度为１．５×１０１９ｃｍ － ３，ＳｉＧｅ合金厚度约４５ｎｍ ．直流特性测试表明，共发射极直流放大倍数约５０，击穿电压ＶＣＥ约９Ｖ；射频特性测试结果表明，晶体管的截止频率为７ＧＨｚ，最高振荡频率为２．５ＧＨｚ．The growth of Si/SiGe/Si heterojunction bipolar transistors by gas\|source molecular beam epitaxy, with high doping in and minimum boron outdiffusion from the Si 0 88 Ge 0 12 base region, is demonstrated. Measurement and analysis of the heterostructures indicate that the boron doping is greater than 10 19 cm -3 in a 45nm base region. DC characteristic of a mesa transistors with the emitter area of 5×80cm -2 show that β is 50 and the breakdown voltage is 9V. The RF characteristic of the transistor show that the f T and f MAX are 7GHz and 2 5GHz, respectively.

关 键 词：异质结 双极晶体管 硅 锗化硅 外延生长 

分 类 号：TN322.8[电子电信—物理电子学]