PEM控制中频孪生反应磁控溅射沉积TiO_2薄膜的研究  

Study in TiO_2 film growth by mid-frequency twin target reactive magnetron sputtering under PEM

作　　者：王军生[1] 童洪辉[1] 韩大凯 王治安[1] 

机构地区：[1]核工业西南物理研究院,四川成都610041

出　　处：《真空》2012年第4期36-39,共4页Vacuum

摘　　要：在中频孪生靶反应磁控溅射实验装置上,用PEM控制沉积TiO2薄膜,实验了靶基距、电流与沉积速率的关系。实验得出,靶基距为112 mm时沉积速率最大,沉积速率与电流基本成线性比例关系。在溅射电流30 A,靶基距112 mm,设置点2.5时,测量了基片随时间的温升变化。然后以自然温升的单晶硅为基片,实验研究了设置点对TiO2薄膜晶体结构、折射率的影响。实验结果表明,设置点越高溅射沉积的薄膜金红石相越多,折射率也越高。TiO2 thin films were deposited in the MF twin target reactive magnetron sputtering device under PEM.The relationship between deposition rate and distance from target,sputtering current were investigated.The results show that the deposition rate is maximum when the target-substrate distance is 112mm.Also the deposition rate is linear to the current.With the current of 30A,target-substrate distance of 112mm and set point of 2.5,the variation of substrate temperature with time was measured.Then use the silicon unheated as substrate,the relationship between set point and crystal structure,refractive index was investigated.The experimental results show that the bigger set point corresponds to more rutile in the coating and greater refractive index.

关 键 词：PEM 磁控溅射 TIO2 沉积速率 设置点 晶体结构 折射率 

分 类 号：O484.1[理学—固体物理] TB43[理学—物理]