HWCVD与RF-PECVD复合技术制备微晶硅薄膜的性能  

Properties of Hydrogenated Microcrystalline Silicon Films Prepared by HWCVD and RF-PECVD Composite Technologies

作　　者：孙晓飞[1] 张贵锋[1] 侯晓多[1] 冯煜东[2] 

机构地区：[1]大连理工大学材料学院三束材料改性教育部重点实验室,辽宁大连116024 [2]兰州物理研究所表面工程国家重点实验室,兰州730000

出　　处：《中国表面工程》2012年第4期84-88,共5页China Surface Engineering

基　　金：教育部重点科技创新项目培养基金((N01707015);表面工程国家重点实验室基金(9140C540105080C5402)

摘　　要：采用热丝化学气相沉积(HWCVD)和射频等离子体化学气相沉积(RF-PECVD)相结合的技术,在普通载玻片和聚酰亚胺衬底上沉积制备微晶硅薄膜。系统考查了热丝到衬底的距离对沉积薄膜结构和性能的影响规律,用拉曼光谱仪、X-射线衍射仪(XRD)、紫外可见光纤光谱仪对薄膜的晶化率、微观结构和光学性能进行研究。结果表明:薄膜沉积速率最高可达到0.73nm/s,晶化率和禁带宽度分别可以在0%～78%和0.86～1.28eV变化,射频等离子体的引入有助于多晶硅薄膜的(220)择优生长,HWCVD的引入有助于薄膜晶化。A combination technique of HWCVD and RF-PECVD was used to prepare hydrogenated microcrystalline silicon（μc-Si：H） films on glass substrate and polyimide substrate.The disciplines of the effects of the distance from the glass substrate to the hot wire on the films＇ structure and properties were investigated.The crystallinity,microstructure,electrical and optical properties of the μc-Si：H films were investigated by raman spectroscopy,X-ray diffraction analysis（XRD）,and UV-visible spectrometer.The results indicate that the crystallinity and energy gap of the μc-Si：H films can be controlled in a range of 0%-78% and 0.86-1.28 eV.The deposition rate is up to 0.73 nm/s.The microcrystalline silicon thin film with（220） preferred orientation can be obtained by introducing RF plasma.The films are liable to crystallize by introducing HWCVD.

关 键 词：微晶硅薄膜 射频等离子体增强化学气相沉积 热丝气相沉积 

分 类 号：TG174.444[金属学及工艺—金属表面处理]