CdTe/Si复合衬底Ex-situ退火研究  

Research of CdTe/Si composite substrate by annealing

作　　者：刘铭[1] 周立庆[1] 巩锋[1] 常米[1] 王经纬[1] 王丛[1] 

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《激光与红外》2012年第8期917-920,共4页Laser & Infrared

摘　　要：复合衬底CdTe/ZnTe/Si的晶体质量是导致随后外延的HgCdTe外延膜高位错密度的主要原因之一,因此如何提高复合衬底CdTe/Si晶体质量是确保硅基碲镉汞走上工程化的关键所在。降低复合衬底CdTe/Si位错密度方法一般有:生长超晶格缓冲层、衬底偏向、In-situ退火和Ex-situ退火等,本文主要研究Ex-situ退火对复合衬底CdTe/Si晶体质量的影响。研究表明复合衬底经过Ex-situ退火后位错密度最好值达4.2×105cm-2,双晶半峰宽最好值达60arcsec。One of the main methods to reduce the HgCdTe/Si dislocation density is to reduce CdTe/Si composite substrate＇s dislocation density. How to improve the CdTe/Si composite substrate＇s crystal quality is very critical for HgCdTe/Si FPAs. The general methods to reduce CdTe/Si composite substrate dislocation density are： growth of su- perlattice buffer layer, Si substrate misorientention and annealing etc. This paper presents the result of the influence on the quality of CdTe/Si composite substrate by Ex-situ annealing. The research indicates that after Ex-situ annealing, the EPD of composite substrate can reduce to 4.2×105 cm^-2 ,and the FWHM can reduce to 60 arcsec.

关 键 词：CdTe/Si MBE 晶体质量 Ex-situ退火 

分 类 号：TN213[电子电信—物理电子学]