垂直转盘式MOCVD反应器中GaN化学反应路径的影响研究  

Study on GaN Chemical Reaction Path in Vertical Rotating-disk MOCVD Reactor

作　　者：徐楠[1] 左然[1] 何晓焜[1] 于海群[1] 

机构地区：[1]江苏大学能源与动力工程学院,镇江212013

出　　处：《人工晶体学报》2012年第4期1107-1112,共6页Journal of Synthetic Crystals

基　　金：国家自然科学基金(61176009);江苏省研究生创新计划项目(CX10B_260Z)

摘　　要：对垂直转盘式MOCVD反应器生长GaN的气相化学反应路径进行研究。结合反应动力学模型,分别采用预混合进口但改变反应腔高度,以及采用环形分隔进口,对反应器的温场、流场和浓度场进行CFD数值模拟,由此确定反应器结构参数对化学反应路径的影响。通过观察主要含Ga粒子的浓度分布以及不同反应路径对生长速率的贡献,判断该反应器可能采取何种反应路径。研究发现,RDR反应器的主要反应路径是TMG热解为DMG,DMG为薄膜沉积的主要前体。反应腔高度变化对反应路径影响较小,但生长速率略有增大;当从预混合进口改为环形分隔进口时,生长更倾向于TMG热解路径,同时生长速率增大,但均匀性变差。The gas phase reaction path for GaN growth in the vertical rotating-disk （RDR） MOCVD reactor was investigated. The effects of reactor geometry on temperature, flow and concentration distributions were simulated combining with reaction kinetics by changing the reaction chamber height of premixing inlet reactor and by using annular division inlet. The magnitudes of the major Ga-containing species and the growth rates resulted from different reaction precursors were used to determine the different chemical reaction paths due to the change of reactor geometrical parameters. It was found that the decomposition of TMG to DMG was the major reaction path in RDR reactor. The chamber height change had little influence on reaction path; GaN growth was more prone to the decomposition of DMG in the annular separate inlets reactor.

关 键 词：生长速率 MOCVD GAN 反应路径 

分 类 号：TN304[电子电信—物理电子学]