内置驱动器的砷化镓高隔离开关芯片  

GaAs PHEMT High-isolation Switch Integrated with TTL Driver

作　　者：许正荣 应海涛 李娜 李小鹏 张有涛[1,2] 杨磊 

机构地区：[1]南京国博电子有限公司,南京210016 [2]南京电子器件研究所,微波毫米波单片集成和模块电路重点实验室,南京210016

出　　处：《固体电子学研究与进展》2012年第4期365-369,共5页Research & Progress of SSE

摘　　要：采用增强/耗尽型(E/D)结构的赝配高电子迁移率晶体管(PHEMT)技术,研制开发的射频开关,具有插损低、隔离度高、承受功率大、线性度高等特点。产品采用0.5μm栅长的砷化镓PHEMT E/D标准工艺加工,将开关电路和驱动电路集成在一颗芯片上,并做了相应的静电防护设计。测试结果表明,在0.01～5.0GHz带内,插入损耗≤1.2dB@3GHz、≤1.6dB@5GHz,带内输入输出驻波比≤1.5,隔离度≥60dB@3GHz、≥52dB@5GHz,1dB压缩功率点达到了30dBm,IP3超过了+52dBm。GaAs RF switch has been designed using Enhancement/Depletion PHEMT tech- nology. This product has fealures of low loss.high isolation,high power capability,high linearity, which is produced by GaAs 0. 5 μm gate-length E/D PHEMT standard process. The switch cir- cuit and TTL driver are integrated into one chip, and an ESD-protection circuit is used to improve its ESD level. The measurement results are as follows： in 0.01-5.0 GHz frequency range, insertion loss≤l. 2 dBG3 GHz, ≤1. 6 dB@5 GHz, VSWR≤1. 5, isolation≥60 dB@3 GHz,≥52 dB@5 GHz, P-1≥30 dBm, IP3≥＋52 dBm.

关 键 词：砷化镓 增强型 耗尽型 射频开关 赝配高电子迁移率晶体管 

分 类 号：TN386[电子电信—物理电子学]