AlGaInP红光LED的GaP窗口层自组装法粗化  

Roughness of the GaP Window Layer of AlGaInP Red LEDs by Self-Assembly Approach

作　　者：朱彦旭[1] 邓琛[1] 徐晨[1] 邢艳辉[1] 

机构地区：[1]北京工业大学电控学院光电子技术实验室,北京100022

出　　处：《半导体技术》2012年第9期698-701,共4页Semiconductor Technology

基　　金：国家自然科学基金(61107026);北京市教委基金(KM20120005004)

摘　　要：利用高分子共混物的自组装机理,将聚苯乙烯(polystyrene,PS)和聚甲基丙烯酸甲酯(polymethyl methacrylate,PMMA)进行混合形成共混物,并进行微相分离和自组装,然后将共混物放置到超声装置中,利用超声波辅助,使自组装微粒直径和位置分布相对均匀,形成用于刻蚀微纳结构的微掩模。最后利用湿法腐蚀,在LED的GaP窗口层上制作出纳米结构的粗化层。通过SEM、显微镜手段,优化了刻蚀条件。测量了器件的光强、光功率以及I-V曲线,结果表明,使用高分子自组装进行粗化,可以在保持电压及波长特性的条件下,提高光输出功率19.3%。Based on self-assembly of polymer blends,the nano-structure was fabricated on the GaP window layer of LED by polymer self-assembling and etching.The mixture of polystyrene（PS） and polynomial methacrylate（PMMA） was micro-phase separated and self-assembled,then was placed in an ultrasonic set.The assembling particles were formed with a high degree of uniformity in the diameter and distributing.Then a micro-mask was formed.And using the micro-mask,the nano-structure was fabricated on the GaP window layer of LED by wet etching.The etching condition was optimized through SEM and microscope.After the lumen output,spectrum and I-V were measured.The test results show that the output power of light is increased about 19.3% as well as keeping the voltage and wavelength performances through the approach.

关 键 词：发光二极管 粗化 磷化镓 自组装 窗口层 

分 类 号：TN312.8[电子电信—物理电子学]