电子束退火制备二硼化镁超导薄膜的可行性研究  

Feasibility Study on Growth of Superconducting Magnesium Diboride Films by Electron Beam Annealing

作　　者：孔祥东[1,2] 戴倩[3] 韩立[1,2] 冯庆荣[3] 初明璋[1,2] 薛虹[1,2] 李建国[1,2] 

机构地区：[1]中国科学院电工研究所,北京100190 [2]生物电磁学北京市重点实验室,北京100190 [3]北京大学物理学院,北京100871

出　　处：《真空科学与技术学报》2012年第8期758-762,共5页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金项目(51177160;51002150;51025726);科技部973计划项目(2006CD601004;2011CB605904);中国博士后科学基金项目(20090460514)

摘　　要：提出了电子束退火制备MgB2超导薄膜新工艺。在对电子束退火制备MgB2超导薄膜可行性进行理论研究的基础上,使用EBW-6型电子束热处理设备,在真空度5.0×10-3Pa、加速电压40 kV、束流2mA、束斑14.2mm、退火时间1.5 s的条件下对[B(10 nm)/Mg(15 nm)]4/SiC夹层结构前驱膜进行了退火实验,得到了零电阻温度为30.3K、转变宽度ΔTc为0.4K、临界电流密度(5 K、0 T)为5.0×106A/cm2、表面平整的MgB2超导薄膜。证明了电子束退火制备MgB2薄膜是切实可行的。该工艺可以推广到大面积MgB2超导薄膜和MgB2线带材的制备。Here,we addressed the feasibility of depositing the superconducting MgB2 thin films by electron beam annealing.Based on the theoretical simulation,the MgB2 thin films were grown.In the newly-developed technique,the precursor films,with a multilayered structure of [B（10 nm）/Mg（15 nm）]4/SiC were annealed by ex situ electron beam annealing,in the lab-built,electron-beam heating set-up,under the following conditions：a pressure of 5.0×10^-3 Pa,an electron beam accelerating voltage of 40×103 V,a beam current of 2×10^-3 A,a beam diameter of 14.2 mm,and an annealing time for 1.5 s.The microstructures and phase structures of the electron beam annealed films were characterized with X-ray diffraction,scanning electron microscopy,and atomic force microscopy.The results show that the fairly smooth and compact MgB2 films display good superconducting properties,including a zero-resistance temperature ～30.3 K,a transition width ΔTc～0.4 K,and a critical current density of Jc（5 K,0 T）～5.0×106 A/cm^2.We suggest that it be feasibly to fabricate large-area MgB2 films,as well as MgB2 wires and MgB2 tapes,by electron beam annealing.

关 键 词：MGB2 超导薄膜 SIC衬底 电子束退火 

分 类 号：O511.3[一般工业技术—材料科学与工程]