GaN MMIC中SiN介质MIM电容的可靠性  

Reliability of SiN-based MIM capacitors in GaN MMIC

作　　者：王鑫华[1] 王建辉[1] 庞磊[1] 陈晓娟[1] 袁婷婷[1] 罗卫军[1] 刘新宇[1] 

机构地区：[1]中国科学院微电子研究所,微电子器件与集成技术重点实验室,北京100029

出　　处：《物理学报》2012年第17期476-481,共6页Acta Physica Sinica

基　　金：国家重点基础研究计划(973)项目(批准号:2010CB327500)资助的课题~~

摘　　要：本文通过恒定应力加速实验对GaN微波单片集成电路中SiN介质MIM电容的可靠性进行了评估,研究了高场下MIM电容的两种失效模式、临界介质击穿电荷密度以及平均失效前时间.通过不同温度下介质电容的导电特性求解了介质内的缺陷能级.重点分析了SiN介质MIM电容的退化机理,研究认为高应力下介质内产生新的施主型缺陷,并占据主导地位,其缺陷能级逐渐向深能级转移;缺陷的持续增加加剧了介质内载流子的散射,导致应力后期泄漏电流降低.SiN介质MIM电容退化机理的研究为加固介质电容提供了依据.Reliability assessment of SiN MIM capacitors in GaN MMIC is performed by constant voltage stress test. Two kinds of failure modes, critical charge density at which the dielectric breaks down and mean time prior to failure are investigated. The trap energy level in SiN dielectric is obtained by temperature dependent current characteristics. The degradation mechanism of SiN MIM capacitor is analyzed. The research shows that new donor-like traps are generated at dominant position during the stress. And the trap energy level becomes deeper after stress. The increased trap accelerates the scattering of the carrier, which leads to the decrease of leakage current in the end. The investigation on the failure mechanism of SiN MIM capacitor provides a reference for reinforcing the dielectric capacitors.

关 键 词：SIN MIM电容 缺陷 平均失效前时间 

分 类 号：TN43[电子电信—微电子学与固体电子学]