基底温度对Ti/TiN薄膜内应力的影响  

Effect of the Substrate Temperature on the Intra-stress of Ti /TiN Multilayer Films

作　　者：胡敏[1] 

机构地区：[1]江西理工大学南昌校区机电工程系,南昌330013

出　　处：《科学技术与工程》2012年第26期6743-6745,6749,共4页Science Technology and Engineering

摘　　要：采用反应直流磁控溅射法,在硅基底上制备了一系列不同结构的Ti/TiN多层薄膜。采用X射线衍射仪(XRD)对薄膜物相进行了分析,研究了溅射沉积过程中基底温度对周期薄膜结构及内应力的影响。结果表明:多层薄膜中的Ti出现(101)面,TiN的(200)面衍射峰强度在基底温度为600℃时最高。随着衬底温度的升高,薄膜内部的压应力逐渐减小,当基底温度在600℃时,薄膜内应力最小。A series of Ti/TiN muhilayer films was deposited on Si substrates by DC reactive magnetron sputte- ring process. The object-image and surface morphology of the films were analysed by X-ray diffraction （XRD）. The influence of the sputtering substrate temperature on the intra-stress of the Ti/TiN muhilayer films was studied. The results show that： There was a Ti（100） in the multilayer films, when the substrate temperature is 600 ~C, the in- tensity of the TIN（200） was the strongest. According to the research, the intra-stress in the film decreases as the temperature increases. The intra-stress of Ti/TiN multilayer films reaches the minimum value when the substrate temperature is 600 C.

关 键 词：磁控溅射 多层薄膜 基底温度 薄膜内应力 

分 类 号：O484.1[理学—固体物理]