等离子诱导QWI对InP/InGaAsP结构的影响  

Impacts of plasma-induced disordering QWI on InP/InGaAsP structure

作　　者：郭剑[1,2] 赵建宜[1,2] 黄晓东[1,2] 马卫东[1,2] 

机构地区：[1]光纤通信技术和网络国家重点实验室,湖北武汉430074 [2]武汉光迅科技股份有限公司,湖北武汉430074

出　　处：《光通信研究》2012年第5期37-39,49,共4页Study on Optical Communications

基　　金：国家"九七三"计划资助项目(2010CB327600);国家"八六三"计划资助项目(2011AA010304)

摘　　要：为了比较简单地在同一外延片上得到具有不同带隙结构的有源器件与无源器件的PIC(光子集成电路)和OEIC(光电子集成电路),采用等离子诱导QWI(量子阱混杂)与RTA(快速热退火)技术获得了InP/InGaAsP结构材料的带隙蓝移,其中通过在材料表面沉积不同占空比的SiO2灰度掩膜来灵活控制带隙偏移量。实验中这种方法在基片上获得了5种带隙波长,其中最大波长偏移为75nm,实验结果说明这种技术是实现PIC和OEIC的有效手段,特别是在多带隙结构中具有广阔的应用前景。In order to realize in a simple way Photonie Integrated Circuits （PIC） and Optoelectronic Integrated Circuits （OEIC） for active and passive optical devices with different band-gap structures in the same wafer, this paper acquires a band-gap blue- shift in InP/InGaAsP structure material by using plasma-induced disordering Quantum-Well Intermixing （QWI） and Rapid Thermal Annealing （RTA） technologies, in which the band-gap of{set can be flexibly controlled by depositing SiO2 gray-scale masks with different duty ratios on the material surface. In the experiment, five kinds of bandgap wavelengths are obtained on the substrate in this method, among which the maximum offset is 75 nm. These results show that this technology is an effec- tive means for realizing PIC and OEIC and has a broad prospect of applications in multi-bandgap structures.

关 键 词：光子集成 量子阱混杂 多量子阱 

分 类 号：TN256[电子电信—物理电子学]