基于MESFET非线性模型的MOSFET DC建模技术  

MOSFET DC Modeling Technique Based on Nonlinear MESFET Models

作　　者：孟茜倩[1] 程加力[1] 高建军[1] 

机构地区：[1]华东师范大学信息科学技术学院,上海200241

出　　处：《电子器件》2012年第3期263-266,共4页Chinese Journal of Electron Devices

摘　　要：常用的MOSFET模型模型参数多且复杂,在保证精确度的基础上应尽量简化模型。尝试采用目前比较成熟通用的MESFET非线性等效电路经验模型表征射频MOSFET的直流特性。进行模型参数提取,从模型对MOSFET的DC仿真与测量曲线数据的对比结果,以及采用这6个模型仿真MOSFET直流特性时的RMS误差结果来看,这6个常用的MESFET非线性模型可以表征MOSFET的直流特性,参数越多模型精度越高。Most of the popular MOSFET models have many complex parameters.Several popular nonlinear MESFET models are used to characterize the DC behavior of MOSFET.Parameters are extracted and conclusions can be drawn from the comparison between the simulated and measured MOSFET I-V curves and the 6 models ’ RMS errors that these 6 nonlinear MESFET models can be used to characterize the DC behavior of MOSFET.The more the parameters,the higher accuracy the model.

关 键 词：CMOS器件 MOSFET模型 参数提取与模型仿真 MESFET模型 直流模型 

分 类 号：TN386[电子电信—物理电子学]