直流磁控溅射制备SnO_2薄膜的阻变特性研究  

Resistance Switching Characteristics of DC Magnetron Sputtered SnO_2 Films

作　　者：刘宝营[1] 张群[1] 

机构地区：[1]复旦大学材料科学系,上海200433

出　　处：《真空科学与技术学报》2012年第9期779-783,共5页Chinese Journal of Vacuum Science and Technology

基　　金：自然科学基金项目(61071005;61136004);博士点基金项目(20110071110010)

摘　　要：采用直流磁控溅射法在Pt/Ti/SiO2基片上分别以三种不同的基板温度和后热处理工艺制备了二氧化锡(SnO2)薄膜。采用X射线衍射仪对三种薄膜的晶格结构进行了分析表征,通过Keithley 4200半导体参数分析仪对薄膜的阻变特性进行了测试。实验结果表明:三种制备条件下的SnO2薄膜均具有阻变性能,基板温度350℃和850℃退火处理分别制备的薄膜同时具有良好的写入/擦除电压分布一致性、较好的高阻态阻值离散性和较大的开关比。初步讨论了三种薄膜阻变特性的机理,薄膜内部导电细丝的形成和断裂程度不同造成三种薄膜高低阻态电阻分布不同,同时影响了写入与擦除阈值电压的分布一致性等阻变参数。The SnO2 films were deposited by dc magnetron sputtering on SiO2 glass substrate coated with Ti and Pt.The influencing growth factors,including the substrate and annealing temperature,were evaluated.The crystallinity and resistance switching characteristics of the SnO2 films were characterized with X-ray diffraction and Keithley 4200.The results show that good resistance-switching characteristics,such as the uniformity of set and reset voltages,high resistance,and large switching ratio,were obtained with the SnO2 films,grown at 350℃,annealed at 850℃.The possible mechanisms responsible for the resistance switching were also tentatively discussed.

关 键 词：二氧化锡 薄膜 直流磁控溅射 阻变特性 导电细丝 

分 类 号：TN304.21[电子电信—物理电子学]