IC缺陷轮廓的分形插值模型  

FRACTAL INTERPOLATION MODEL OF IC DEFECT OUTLINES

作　　者：姜晓鸿[1] 赵天绪[1] 郝跃[1] 徐国华[1] 

机构地区：[1]西安电子科技大学微电子所,西安710071

出　　处：《电子科学学刊》2000年第4期659-666,共8页

基　　金：863高科技项目;国家部级项目资助

摘　　要：现用于集成电路(IC)成品率预报及故障分析的缺陷模型均是用圆或正方形来代替真实缺陷的复杂轮廓进行近似建模的,从而在模型中引入了很大的误差.本文利用分形插值的思想直接对真实缺陷的轮廓进行模拟,从而提出了一种新的缺陷轮廓表征模型.实验结果表明:与传统的最大圆模型、最小圆模型及椭圆模型相比,新模型的建模精度有了很大的提高。Available defect outline model used for yield prediction and inductive fault analysis of integrated circuits (IC) all model a real defect by replacing its real rugged outlines with circular discs or squares, then great errors were aroused in these models. Based on the idea of fractal interpolation, this paper presents a new model to characterize those real defect outlines. The comparison of the new model with those models available indicates that the new model is a more accurate defect outline model.

关 键 词：分形插值 缺陷轮廓 集成电路 

分 类 号：TN402[电子电信—微电子学与固体电子学]