两种二硼化镁超导薄膜布图布线的湿法刻蚀技术(英文)  

Two Patterning Techniques for Superconducting MgB_2 Films by Wet Etching

作　　者：周章渝[1,2] 杨发顺[1,2] 杨健[1] 王松[1,2] 邓朝勇[1,2] 傅兴华[1,2] 

机构地区：[1]贵州大学理学院,贵阳550025 [2]贵州省微纳电子与软件技术重点实验室,贵阳550025

出　　处：《材料导报》2012年第18期7-9,共3页Materials Reports

基　　金：国家自然科学基金(51002035);贵州省科学技术基金(20092058;20112008);贵州大学自然科学青年科研基金(2009014)

摘　　要：超导薄膜实现布图布线工艺是制备超导电子元件的必要步骤。报道了两种二硼化镁超导薄膜布图布线的湿法刻蚀技术:一种是先利用双氧水(H2O2)刻蚀前驱体硼薄膜,然后将刻蚀的样品放入钽坩埚中在镁蒸气下高温退火,实现了对超导薄膜二硼化镁(MgB2)布图布线的刻蚀;另一种是选用氢氟酸(HF)和硝酸(HNO3)的混合溶液直接在二硼化镁超导薄膜上进行图形刻蚀。通过上述两种方法刻蚀出的MgB2薄膜图形精确度高,超导转变温度Tc都在38K以上,临界电流Ic约为1×106 A/cm2。Effectively patterning of MgBz thin film is a very critical step to the application of superconducting films in superconducting electronics. Two patterning techniques for superconductive MgB2 films by wet etching were presented. In the first technique the precursor boron films were patterned by using H2O2 as etchant. Then the samples were annealed in magnesium vapor in a tantalum crucible, and the patterned boron films were transformed to supercon- ducting MgB2 films. In the second technique the MgBe films were patterned directly by a mixture of hydrofluoric acid （HF） and nitric acid （HNO3） solutions. The patterned Mgg2 films with rather high resolution were fabricated suc- cessfully by using above techniques. critical current density （Ic） is about （T2） of the patterned MgB2 films is around 38K and

关 键 词：MGB2超导薄膜 布图布线 湿法刻蚀 

分 类 号：TN705[电子电信—电路与系统]