回流加固结构金属化系统的可靠性测试  

Reliability of Metallization System with Backflow Structure

作　　者：孙英华[1] 李志国[1] 苗城 程尧海[1] 张万荣 强桂华 穆杰 

机构地区：[1]北京工业大学电子工程系,北京100022 [2]北京东方电子集团东方半导体器件厂,北京100016 [3]电子十三所,石家庄050002

出　　处：《半导体技术》2000年第4期47-50,共4页Semiconductor Technology

基　　金：北京市自然科学基金!4972007;北京科技新星计划资助!951874300

摘　　要：结合器件具体结构和工艺，在回流效应理论和实验研究的基础上优化设计了回流加固结构。建立了一套自动测试系统，对回流加固结构样管进行了电热加速应力试验，考核了不同结构的加固效果及抗热电迁徙性能，优选了最佳回流结构。The Backflow effect plays an important role in electromigration. On the basis of the theory and experiments of backflow effect, a novel structure was designed and used to enhance the electromigration resistance of metalliziation in microwave devics. The reliability of samples with six kinds of structures was tested under ramping current and constant current stress. The relationship between electromigration resistance and structure design has been obtained.

关 键 词：回流加固结构 集成电路 金属化系统 可靠性测试 

分 类 号：TN407[电子电信—微电子学与固体电子学]