SP^2键含量对非晶金刚石膜电子场发射性能的影响  

The Effect of SP^2 Content on Field Emission Character of Amorphous Diamond Film

作　　者：周江云[1] 李琼[1] 徐静芳[1,2] 茅东升 柳襄怀[3] 

机构地区：[1]华东师范大学电子科学技术系 [2]中科院上海冶金研究所离子束开放实验室,上海200052 [3]中科院上海冶金研究所离子束开放实验室

出　　处：《华东师范大学学报（自然科学版）》2000年第2期45-48,共4页Journal of East China Normal University(Natural Science)

基　　金：国家自然科学基金资助!(No.69671 0 1 1 )

摘　　要：该文研究了真空磁过滤弧沉积方法制备的非晶金石薄膜 (a-DF)的电子场发射性能 ,SP2 键含量不同的薄膜的场发射性能有很大的差异 ,SP2 键含量越高 ,阈值电场越小 ,发射电流越大 ,同时失效率也较高。SP2 键含量为 6 .5% ,2 0 % ,40 %的薄膜 ,其阈值电场分别为2 .7V/ μm,1 .5V/ μm ,0 .7V/ μm ,远小于金属和硅尖锥的阈值电场。所有样品的发射点均为随机的点状分布。Electron field emission character of amorphous diamond film (a-DF) deposited by FAD (Filtered arc deposition) technique with variant SP-2 content have been investigated. The experimental results show tha t with the increasing SP-2 content the turn-on field is decreased, but the fa ilure rate is increased too. The turn-on fields were 2.7V/μm, 1.5V/μm, and 0 .7V/μm for the samples with sp-2 content 6.5%, 20%, 40% respecively. Hypothes is has been proposed to interpret the effect of SP-2 content on field emission character of a-DF.

关 键 词：非晶金刚石薄膜 SP^2键 场发射 FAD 

分 类 号：O462.4[理学—电子物理学] O484.42[理学—物理]