高温大电流应力对TiAl/GaAs和TiPtAu/GaAs Schottky二极管Richardson图的影响  

Effect of High Temperature and High Current Stress on Richardson Plots of TiAl/GaAs and TiptAu/GaAs Schottky Diodes

作　　者：张万荣 高玉珍 李志国[1] 程尧海[1] 孙英华[1] 陈建新[1] 沈光地[1] 穆杰[2] 

机构地区：[1]北京工业大学电子工程系,北京100022 [2]信息产业部河北半导体研究所,石家庄050051

出　　处：《北京工业大学学报》2000年第2期1-4,共4页Journal of Beijing University of Technology

基　　金：北京市科技新星计划资助!952871900;国防科工委"九.五"军事预研资助

摘　　要：研究了高温和大电流应力对ＴｉＡｌ／ＧａＡｓ和ＴｉＰｔＡｕ／ＧａＡｓ Ｓｃｈｏｔｔｋｙ二极管Ｉ￣Ｖ特性及对Ｒｉｃｈａｒｄｓｏｎ图的影响。Effect of high temperature and high current stress on I-V characteristics and Richardson plots of TiAl / GaAs and TiptAu / GaAs Schottky diodes are studied. It is found that as stressing time increases, for TiAl / GaAs Schottky diode, the banter height decreases rapidly, the product of Richardson constant A* and area S of diode decreases quickly, whereas for TiptAu / GaAs Schottky diode, the barrier height and the product of A* and S increase first and then trends to be a constant. In the I-V characteristics, as stressing time increases, the saturation current of TiAl / GaAs Schottky diodes increases, for TiptAu / GaAs Schottky diodes, the saturation current decreases first and then trends to be a constant. These results have been attributed to the intermetallic compounds formed formed in the metal / GaAs interface.

关 键 词：SCHOTTKY二极管 Richardson图 高温 大电流应力 

分 类 号：TN310.1[电子电信—物理电子学]