Al_xGa_(1-x)As三元化合物共沉积研究  

STUDY ON CO-ELECTRODEPOSITED TRI-COMPOUND Al_XGa_(1-X)As FILMS

作　　者：杨春晖[1] 叶水驰[1] 韩爱珍[1] 高元凯[1] 

机构地区：[1]哈尔滨工业大学,哈尔滨150001

出　　处：《太阳能学报》2000年第3期239-242,共4页Acta Energiae Solaris Sinica

摘　　要：在简单盐溶液中添加络合剂——柠檬酸 ,电共沉积 Alx Ga1 - x As三元化合物。用能谱分析仪进行成分分析 ,获得化学计量比接近 Al0 .3Ga0 .7As的三元化合物半导体材料。The preparation of tri compound Al xGa 1-x As films by using electrodepositing technology in simple salt solution with additives citric acid is described.The composition of the deposited films was measured by energy spectrum analyzer.The result shows that we have obtained approximately stoichiometric Al 0.3 [KG-3]Ga 0.7 [KG-3]As tricompound semiconductor materials.

关 键 词：ALGAAS 三元化合物 电共沉积 络合剂 

分 类 号：TN304.26[电子电信—物理电子学]