分布式多元胞集成半导体放电管的设计与工艺  

Design and Process of Distributed Multi-Cell Integrated Semiconductor Arrester

作　　者：唐政维[1] 徐佳[1] 张志华[1] 左娇[1] 谢欢[1] 罗嵘[1] 

机构地区：[1]重庆邮电大学光电工程学院,重庆400065

出　　处：《微电子学》2012年第5期721-724,共4页Microelectronics

基　　金：重庆市科技攻关计划资助项目(CSTC2010AC2142)

摘　　要：介绍了一种分布式多元胞集成半导体放电管的结构设计和工艺方法。在保持传统单元胞放电管器件表面总面积和放电管纵向剖面NPNPN五层结构不变的情况下,将放电管发射区等分成2(N+1)2个(N取0,1,2,3,4),构成在基区中心对称的多元胞结构。该结构优化了放电管阴极发射区的分布,使浪涌电流在整个芯片平面上趋于均匀,降低了发射区的热量集中效应;同时增加了电流放大系数,减少了放电管的开通时间。采用镓扩散、玻璃钝化等工艺流程,制作出分布式多元胞集成半导体放电管,解决了单元胞放电管散热不均匀、响应速度慢及可靠性差的问题。雷电波冲击电流测试表明,该结构提高了器件的抗电涌能力,可广泛应用于通信领域的雷电防护。A distributed multi-cell integrated semiconductor arrester was designed and fabricated.Based on traditional single-cell arrester with unchanged surface area and NPNPN five-layer structure in longitudinal profile,emitter area in the new structure was equally divided into 2（N＋1） 2（N is 0,1,2,3,4） zones to constitute centrosymmetric multi-cell structure in base area,which optimized distribution of cathode emitter of the arrester,making surge current in the plane tend to be uniform throughout the chip and reducing heat concentration effect.It also increased current amplifying factor and reduced turn-on time of the arrester.The distributed multi-cell integrated semiconductor arrester using Ga diffusion and glass passivation solved problems of uneven heat,slow response and poor reliability in single-cell arresters.Test results showed that the new structure with improved anti-surge capacity was applicable for anti-lightning in communication systems.

关 键 词：放电管 半导体器件 多元胞 

分 类 号：TN302[电子电信—物理电子学] TN305