单粒子烧毁、栅穿效应的电路模拟与测试技术  

Studies of Equivalent Circuit Simulation and Testing Techniques for Single Event Burnout and Gate Rupture of Power MOSFETs

作　　者：唐本奇[1] 王燕萍[1] 耿斌[1] 杜凯[2] 

机构地区：[1]西北核技术研究所,西安710024 [2]西安电力电子技术研究所,西安710061

出　　处：《电力电子技术》2000年第4期56-59,共4页Power Electronics

摘　　要：建立了功率MOS器件单粒子烧毁、栅穿效应的等效电路模型 ,介绍了模型参数提取方法。采用PSPICE电路模拟程序 ,对单粒子烧毁、栅穿效应机理进行了模拟和分析 ,建立了利用Cf 2 52裂片源模拟空间重离子单粒子烧毁、栅穿效应的测试装置。实验结果表明 ,本文建立的模拟方法。Several new equivantent circuit models to simulate Single Event Burnout (SEB) and Single Event Gate Repture (SEGR) are established.PSPICE circuit simulation software is used to simulate SEB and SEGR.A equipment and experimental method are set up to analyze the SEB and SEGR sensitivities of power MOSFET devices exposed to heavy ions from 252 Cf source.Experimental results show the simulatiom method,the testing equipment and the experiment measure proposed in this paper are feasible and reliable.

关 键 词：电路模拟 功率MOS器件 单粒子烧毁 单粒子栅穿 

分 类 号：TN386.107[电子电信—物理电子学]