溅射制备Ge，Nb共掺杂窄光学带隙和低电阻率的TiO2薄膜  

Ge and Nb co-doped TiO_2 films with narrow band gap and low resistivity prepared by sputtering

作　　者：罗晓东[1] 狄国庆[1] 

机构地区：[1]苏州大学物理科学与技术学院,薄膜材料江苏省重点实验室,苏州215006

出　　处：《物理学报》2012年第20期391-397,共7页Acta Physica Sinica

基　　金：江苏省高校自然科学重大基础研究项目(批准号:05KJA43006)资助的课题~~

摘　　要：采用射频磁控溅射技术制备了Ge,Nb共掺杂的锐钛矿结构TiO_2薄膜,详细探讨了薄膜的结构、电阻率及光学带隙等性质随Ge,Nb掺杂量、溅射功率和热处理温度等参数的变化,发现Ge,Nb共掺杂可以同时调节TiO_2薄膜的光学带隙和电阻率.体积分数约为6%Nb和20%Ge的共掺杂TiO_2薄膜电阻率由10~4Ω/cm减小至10^(-1)Ω/cm,光学带隙由3.2 eV减小至1.9 eV.退火后掺杂TiO_2薄膜不仅显示更低的电阻率,还表现出更强的可见-红外光吸收.结果表明,改变Ge,Nb的掺杂量和退火条件能够制备出电阻率和带隙都可调的TiO_2薄膜.Ge and Nb co-doped anatase TiO2 films are prepared by using radio frequency magnetron sputtering. The structures, resistivities and band gap properties of the films, which depend on Ge and Nb doping amounts, sputtering power and annealing temperature, are discussed. It is found that the band gap and resistivity of TiO2 film can be simultaneously tailored by co-doping with Ge and Nb. With doping volume fractions of 6% Nb and 20% Ge, the resistivity of the film can be reduced from 10^4 Ω/cm to 10^-1 f~/cm, and the band gap from 3.2 eV to 1.9 eV. After annealing, the Ge and Nb co-doped TiO~ film shows not only a lower resistivity but also a stronger absorption for visible and infrared light. As a result, Ge and Nb co-doped TiO2 film with adjustable band gap and resistivity can be prepared with magnetron sputtering by choosing proper Ge and Nb doping amounts and annealing conditions.

关 键 词：Ge.Nb—TiO2薄膜 电阻率 光学带隙 磁控溅射 

分 类 号：O484.1[理学—固体物理]