Dry Etching Characteristics of Amorphous Indium-Gallium-Zinc-Oxide Thin Films  

作　　者：郑艳彬 李光 王文龙 李秀昌 姜志刚 

机构地区：[1]School of Pharmaceutical Sciences,Changchun University of Chinese Medicine [2]The State Key Laboratory of Superhard Materials,Jilin University

出　　处：《Plasma Science and Technology》2012年第10期915-918,共4页等离子体科学和技术（英文版）

摘　　要：Amorphous indium-gallium-zinc-oxide （a-IGZO） thin-film transistor （TFT） backplane technology is the best candidate for flat panel displays （FPDs）. In this paper, a-IGZO TFT structures are described. The effects of etch parameters （rf power, dc-bias voltage and gas pressure） on the etch rate and etch profile are discussed. Three kinds of gas mixtures are compared in the dry etching process of a-IGZO thin films. Lastly, three problems are pointed out that need to be addressed in the dry etching process of a-IGZO TFTs.Amorphous indium-gallium-zinc-oxide （a-IGZO） thin-film transistor （TFT） backplane technology is the best candidate for flat panel displays （FPDs）. In this paper, a-IGZO TFT structures are described. The effects of etch parameters （rf power, dc-bias voltage and gas pressure） on the etch rate and etch profile are discussed. Three kinds of gas mixtures are compared in the dry etching process of a-IGZO thin films. Lastly, three problems are pointed out that need to be addressed in the dry etching process of a-IGZO TFTs.

关 键 词：IGZO TFT dry etch plasma 

分 类 号：O484.4[理学—固体物理]