电迁移对Ni/Sn/Ni-P焊点界面反应的影响  

Effect of Electromigration on Interfacial Reaction in Ni/Sn/Ni-P Solder Joint

作　　者：陈雷达[1] 周少明[1] 黄明亮[1] 

机构地区：[1]大连理工大学,辽宁大连116024

出　　处：《稀有金属材料与工程》2012年第10期1785-1789,共5页Rare Metal Materials and Engineering

基　　金：国家自然科学基金项目(U0734006);教育部高校博士点基金项目(20070141062)

摘　　要：研究了温度为150℃,电流密度为5.0×103A/cm2的条件下电迁移对Ni/Sn/Ni-P(Au)线性接头中界面反应的影响。结果表明电流方向对Ni-P层的消耗起着决定作用。当Ni-P层为阴极时,电迁移加速了Ni-P层的消耗,即随着电迁移时间的延长,Ni-P层的消耗显著增加;电迁移100h后Ni-P层消耗了5.88μm,电迁移200h后Ni-P层消耗了13.46μm。在Sn/Ni-P的界面上形成了一层Ni2SnP化合物而没有观察到Ni3Sn4化合物的存在,多孔状的Ni3P层位于Ni2SnP化合物与Ni-P层之间。当Ni-P层为阳极时,在电迁移过程中并没有发现Ni-P层的明显消耗,在Sn/Ni-P的界面处生成层状的NiSn化合物,其厚度随着电迁移时间的延长而缓慢增加,电迁移200h后NiSn层的厚度达到1.81μm。The line-type Ni/Sn/Ni-P（Au） solder joints were used to determine the effect of electromigration（EM） on interfacial reaction under the current density of 5.0×103 A/cm2 at 150℃.For comparison,the Ni/Sn/Ni-P（Au） interconnects were aged at the same temperature for the same duration.The results show that the current direction plays an important rule on Ni-P layer consumption.When electrons flowed from Ni-P side to Ni side（Ni-P layer was the cathode）,EM accelerated the Ni-P layer consumption.More Ni-P layer was consumed with increasing EM time.After EM for 100h and 200h,5.88 μm and 13.46 μm Ni-P layer were consumed,respectively.Instead of Ni3Sn4,Ni2SnP IMC layer was observed at the Sn/Ni-P interface,and there was a porous Ni3P layer between Ni2SnP IMC and Ni-P.When electrons flowed from Ni side to Ni-P side（Ni-P layer was the anode）,no obvious Ni-P layer consumption was observed during EM,and Ni3Sn4 IMC formed at the Sn/Ni-P interface.The thickness of the Ni3Sn4 IMC increased slowly with increasing EM time and reached to 1.81μm after EM for 200 h.

关 键 词：电迁移 NI-P NI 界面反应 金属间化合物 

分 类 号：TN405[电子电信—微电子学与固体电子学]