旋磁基片DC-10GHz微波功率电阻器设计制作  

Design and fabrication of DC-10 GHz microwave power thin film resistors on gyromagnetic substrate

作　　者：计量 张怀武[1] 牛旭博[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《电子元件与材料》2012年第11期22-24,共3页Electronic Components And Materials

基　　金：国家自然科学基金资助项目(No.50972023)

摘　　要：基于旋磁基片设计并通过光刻工艺制作DC-10 GHz微波电阻器。通过HFSS仿真设计制作DC-10 GHz电阻器,采用磁控反应溅射制作TaN薄膜,电压驻波比VSWR均小于1.25。旋磁基片微波电阻器相对于应用广泛的氧化铝基片微波电阻器,可直接集成于同样以旋磁为基片的结环行器中,从而能制作出更加小型化的微波隔离器,有效减小器件体积,符合现代通信产品小型化、集成化的发展要求。Microwave power thin film resistors with DC-10 GHz operating frequency were designed and simulated by HFSS. According to the simulation results, the TaN microwave power thin film resistors were fabricated by reactive magnetron sputtering and made by lithography process. The simulation results show that the VSWR of the designed thin film resistor at the frequency range ofDC-10 GHz is less than 1.25. Gyromagnetic substrate as opposed to the widely used Al2O3 substrate can be directly integrated in junction circulator. This is conducive to create a more miniaturized microwave isolators. In conclusion,microwave resistor produced by gyromagnetic substrate is adapt to the requirements of miniaturization and integration of modem communication products.

关 键 词：薄膜电阻器 光刻工艺 旋磁基片 TaN薄膜 

分 类 号：TM54[电气工程—电器]