NMOS器件中单粒子瞬态电流收集机制的二维数值分析  

Two-dimensional numerical analysis of the collection mechanism of single event transient current in NMOSFET

作　　者：卓青青[1] 刘红侠[1] 郝跃[1] 

机构地区：[1]西安电子科技大学微电子学院、宽禁带半导体材料与器件教育部重点实验室,西安710071

出　　处：《物理学报》2012年第21期491-497,共7页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:61076097,60936005);教育部科技创新工程重大项目培育资金(批准号:708083);中央高校基本科研业务费专项资金(批准号:200807010010)资助的课题~~

摘　　要：通过二维数值模拟,深入分析了NMOSFET在不同漏极偏置、不同栅长度和不同注入位置下的单粒子效应.研究结果表明:漏极偏置电压越高,栅长度越短,器件的单粒子瞬态电流越大,收集电荷越多.通过研究不同注入位置情况下的单粒子效应表明:单粒子瞬态脉冲电流的大小和器件中该处对应的电场强度成比例变化.研究结果为设计抗单粒子器件提供了重要指导.The single event effects in NMOSFET at different values of drain bias, gate length and striking location are thoroughly analyzed by two-dimensional numerical simulator in this paper. The results show that single event transient current increases with the increase of drain bias and with the decrease of gate length. Furthermore, single event transient current varies with the electric field at some places in the device. The present study provides important guidance on the devices design of mitigating the single event effects.

关 键 词：单粒子瞬态脉冲 电荷收集机制 注入位置 漏极偏压 

分 类 号：TN386[电子电信—物理电子学]