基于BJT的ESD保护器件中维持电压的建模与分析  

Modeling and Analysis of Holding Voltage in BJT-based ESD Protection Device

作　　者：梁海莲[1] 杨兵[1,2] 顾晓峰[1] 柯逸辰[1] 高国平[2] 

机构地区：[1]轻工过程先进控制教育部重点实验室,江南大学电子工程系,江苏无锡214122 [2]中国电子科技集团公司第58研究所,江苏无锡214035

出　　处：《固体电子学研究与进展》2012年第5期446-450,共5页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(11074280);江苏高校优势学科建设工程资助项目;中央高校基本科研业务费专项资金资助项目(JUSRP20914;JUDCF10031)

摘　　要：基于双极晶体管（BJT）结构的静电放电（ESD）保护器件具有双向导通特性和良好的保护性能,在ESD保护中应用广泛。鉴于该类器件在负阻效应下维持电压的产生机理和建模方面的研究较少,提出了一种维持电压的数学建模方法。首先分析了多种调制效应对维持电压的影响,优化了模型参数;其次,基于0.6μm BiCMOS工艺对NPN型BJT的结构及电学性能进行了仿真分析,通过数据拟合得到了维持电压的估算模型;最后,制备了两种不同结构的样品并进行了测试,实测数据与估算值的相对误差范围约12%-15%,表明建立的维持电压模型具有较高的可靠性。The electro-static discharge（ESD） protection device based on the bipolar junction transistor（BJT） structure has been widely used due to its good bidirectional conduction ability and excellent protection performance.Since there is a little in-depth research on the production mechanism and modeling of the holding voltage under the negative resistor effect in such ESD protection device,we propose a modeling method for the holding voltage.By analyzing the impact of various modulation effects on the holding voltage,the modeling parameters are optimized first.Then,the structure and the electrical properties of NPN BJT are studied by simulation under the 0.6 μm BiCMOS process,and a holding voltage estimation model is established by data fitting.Finally,two different BJT-based ESD protection devices are prepared and tested.The relative error range between the estimated and the measured data is about 12%~15%,indicating that the established holding voltage model is quite reliable.

关 键 词：静电放电 双极晶体管 负阻效应 调制效应 维持电压 仿真 建模 

分 类 号：TN322.8[电子电信—物理电子学]