MBE生长的高质量AlGaAs/InGaAs双δ掺杂PHEMT结构的材料  

High Quality AlG)s/InG)s Double δ Doped Pseudomorphic HEMTs Grown by MBE\+*

作　　者：曹昕[1] 曾一平[1] 孔梅影[1] 王保强[1] 潘量[1] 张昉昉[1] 朱战萍[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《Journal of Semiconductors》2000年第9期934-936,共3页半导体学报（英文版）

基　　金："九五"国家重点科技攻关项目!97-770 -0 1 -0 1支持课题&&

摘　　要：用 MBE方法制备的 PHEMT微结构材料 ,其 2 DEG浓度随材料结构的不同在 2 .0— 4.0× 1 0 12 cm- 2 之间 ,室温霍耳迁移率在 50 0 0— 650 0 cm2 · V- 1· s- 1之间 .制备的 PHEMT器件 ,栅长为 0 .7μm的器件的直流特性 :Idss～ 2 80 m A/mm,Imax～ 52 0— 580 m A/mm,gm～ 32 0— 40 0 m S/mm,BVDS>1 5V( IDS=1 m A/mm) ,BVGS>1 0 V,微波特性 :P0 ～ 60 0— 90 0 m W/mm,G～ 6— 1 0 d B,ηadd～ 40— 60 % ;栅长为 0 .4μm的器件的直流特性 :Imax～ 80 0 m A/mm,gm>40 0 m S/mm.High quality AlG)s/InG)s double δ doped pseudomorphic HEMTs have bee n grown by MBE. The 2DEG density of the material is ranged from 2.0×10 (12) c m (-2) to 4.0×10 (12)cm (-2) and room temperature Hall mobility ranged from 5000cm 2·V (-1)·s (-1) to 6500cm 2·V (-1)·s (-1) with the difference of the material structure. The D.C. characteristics of the PHE MT device with gate length of 0.7μm are: I_(dss)～280mA/mm, I_(ma x )～520—580mA/mm, g_m^320—400mS/mm, BV_(DS)>15V(I_(DS)=1mA/ mm), BV_(GS)>10V and the R.F. characteristics are : P_0～600—900mW/mm, G^6—10dB, h_(add)~40—60%. The D.C. c haracteristics of the PHEMT device with gate length of 0.4μm are: I_(max )～800mA/mm, g_m>400mS/mm.

关 键 词：PHEMT MBE AlGaAs/InGaAs 掺杂 

分 类 号：TN304[电子电信—物理电子学]