不同薄膜材料上铝诱导多晶硅薄膜的研究  

Aluminum-induced Crystallization of Polycrystalline Silicon Films on Different Thin-film Materials

作　　者：唐正霞[1,2] 沈鸿烈[2] 江丰[2] 

机构地区：[1]金陵科技学院材料工程学院,江苏南京211169 [2]南京航空航天大学材料科学与技术学院,江苏南京210016

出　　处：《金陵科技学院学报》2012年第3期38-41,共4页Journal of Jinling Institute of Technology

基　　金：金陵科技学院博士启动基金(JIT-B-201206)

摘　　要：先在玻璃衬底上制备Mo、掺锡氧化铟(ITO)和掺铝氧化锌(AZO)导电电极材料,然后分别以普通玻璃、玻璃/Mo、玻璃/ITO和玻璃/AZO为衬底,沉积a-Si/SiO2/Al叠层膜,于450°C退火2h。XRD测试表明,4种衬底上非晶硅均可以被诱导生成多晶硅薄膜,因此Mo、ITO和AZO均可以作为铝诱导多晶硅器件的电极材料。Different conductive electrode materials including Mo, ITO and AZO are deposited on glass. Then glass,glass/Mo, glass/ITO and glass/AZO are used as substrates to prepare for glass/amorphous/silicate/aluminum stacks. The stacks are annealed at 450 ℃ for 2 hours. It is illustrated by XRD patterns that the amorphous silicon on all substrates can be induced to crystallize to polycrystalline silicon. So all of Mo, ITO and AZO can be used as electrode materials for electronic components made of AIC polycrystalline silicon.

关 键 词：薄膜 多晶硅 铝诱导晶化 

分 类 号：O484[理学—固体物理] TB34[理学—物理]