碲镉汞薄膜的MOVPE生长和特性  

The Growth and Characteristics of MOVPE HgCdTe Film

作　　者：王静宇[1] 刘朝旺[1] 杨玉林[1] 宋炳文[1] 

机构地区：[1]昆明物理研究所,昆明650223

出　　处：《红外技术》2000年第5期2-4,9,共4页Infrared Technology

摘　　要：报道了在水平、常压MOVPE实验型生产装置中 ,采用互扩散多层工艺 (IMP) ,用金属有机化合物DMCd、DiPTe和元素Hg ,在CdTe和GaAs衬底上生长的HgCdTe薄膜 ,其组分和薄膜厚度的均匀性以及p型电学性质 ,初步达到了目前红外焦平面列阵研制的要求 ,同时 ,这种薄膜的生长具有一定重复性。This paper presents the constituent, thickness uniformity and p type electrical properties of HgCdTe(MCT) film growing in horizontal, normal pressure MOVPE equipment using the Interdiffused Mullilayer Process(IMP) with metallic organic compound DMCd, DiPTe and element Hg on CdTe and GaAs substrates, which basicly meet the presently manufacturing demand of infrared focal plane array.The growing technique of the film has a definite repeability.

关 键 词：MOVPE HGCDTE 薄膜生长 

分 类 号：TN304.055[电子电信—物理电子学] TN213