铝诱导晶化制备多晶硅薄膜研究进展  

Research Progress in Preparation of Polycrystalline Silicon Thin Films by Aluminum Induced Crystallization

作　　者：翟小利[1] 谭瑞琴[1] 戴世勋[1] 王维燕[2] 黄金华[2] 宋伟杰[2] 

机构地区：[1]宁波大学信息科学与工程学院,宁波315211 [2]中国科学院宁波材料技术与工程研究所,宁波315201

出　　处：《材料导报》2012年第21期148-152,共5页Materials Reports

基　　金：宁波市新型光电功能材料及器件创新团队资助(2009B21007)

摘　　要：铝诱导晶化(AIC)技术制备多晶硅(Poly-Si)薄膜因处理温度低、退火时间短,且所制备的薄膜晶粒尺寸大而受到广泛关注。阐述了AIC法制备Poly-Si薄膜的交换机制,着重讨论了AIC过程中工艺条件对制备Poly-Si薄膜质量的影响,简单介绍了AIC制备的Poly-Si薄膜在太阳电池器件方面的研究现状,并指出提高AIC法制备的Po-ly-Si薄膜籽晶层及外延层质量以改善薄膜电池性能是今后的重点研究方向。Aluminum induced crystallization （AIC） technique is received extensive attention, by which polycrystalline silicon （poly-Si） films with large grain sizes can be successfully prepared at low annealing temperature and short process time. The aluminum induced layer exchange mechanism is described and the influences of preparation condi- tions on the quality of poly-Si thin films during the AIC process are reviewed. More over, the research status in solar cell devices of poly-Si thin films prepared by AIC is discussed and the focus of future research that improving the quali- ty of poly-Si thin-film seed layer prepared by AIC and epitaxial layer is given.

关 键 词：铝诱导晶化 多晶硅薄膜 太阳电池 

分 类 号：TN304.12[电子电信—物理电子学]