基于游离磨粒的化学机械抛光材料去除非均匀性形成机制(英文)  

Formation Mechanism of Non-Uniformity of Material Removal in Chemical Mechanical Polishing Based on Free Abrasive

作　　者：苏建修[1] 张学铭[1] 刘幸龙[2] 刘志响[3] 张竹青[2] 

机构地区：[1]河南科技学院机电学院,新乡453003 [2]河南工业大学机电工程学院,郑州450007 [3]河南理工大学机械与动力工程学院,焦作454000

出　　处：《纳米技术与精密工程》2012年第6期541-548,共8页Nanotechnology and Precision Engineering

基　　金：the financial support of the National Natural Science Foundation of China(No.51075125)~~

摘　　要：本文主要研究硬脆晶体材料化学机械抛光中基片内材料去除非均匀性的形成机理.首先分析了化学机械抛光时抛光机的运动参数对硅片表面上相对速度分布非均匀性、摩擦力分布非均匀性、接触压力分布非均匀性及磨粒运动轨迹密度分布非均匀性的影响规律.然后通过基片内材料去除非均匀性实验,得出了抛光机运动参数对基片表面材料去除非均匀性的影响.通过比较理论分析与实验结果,基片表面上相对速度分布非均匀性、摩擦力分布非均匀性及接触压力分布非均匀性随转速的变化趋势与基片表面材料去除非均匀性的实验结果相差较大,只有磨粒在基片表面上的运动轨迹分布非均匀性与基片表面材料去除非均匀性的实验结果趋势相同.研究结果表明,基片表面材料去除非均匀性是由磨粒在基片表面上的运动轨迹分布非均匀性造成的,充分说明了基片表面材料去除的机械作用主要是磨粒的机械作用.The formation mechanism of within-wafer non-uniformity （WIWNU） of material removal was researched in chemical mechanical polishing（CMP） of hard and brittle crystal substrates. First, the influence of motion parameters of CMP machine on the non-uniformity of relative velocity distribution, friction distribution, contact pressure distribution and motion trajectory distribution of the abrasives on wafer surface was analyzed. Then, the experiment of the WIWNU of material removal was conducted in wafer CMP, and the influence of motion parameters of CMP machine on the WIWNU of material removal was obtained. Finally, by comparing the theoretical analysis and experimental results, it was found that only the trends of motion trajectory distribution of the abrasive particles accorded with the experimental results, while the non-uniformity of relative velocity distribution, friction distribution and contact pressure distribution on wafer surface did not accord with the experimental results. So, it can be concluded that the WIWNU of material removal is caused by the non-uniformity of motion trajectory distribution of the abrasives on wafer surface. It is fully explained that the mechanical action of material removal is mainly the mechanical action of abrasives.

关 键 词：化学机械抛光 材料去除机理 材料去除率 非均匀性 磨粒 

分 类 号：TB306[一般工业技术—材料科学与工程]